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IXYS

IXTK46N50L

MOSFET 46 Amps 500V

Basic Information

View Datasheet ↗
Manufacturer
IXYS
Product Category
MOSFET
Series
IXTK46N50L
Package
TO-264-3
Mounting Style
Through Hole
Packaging
Tube
RoHS
Compliant (source record)

Technical Specifications

25 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
500 V
Id - Continuous Drain Current
46 A
Rds On - Drain-Source Resistance
160 mOhms
Vgs th - Gate-Source Threshold Voltage
6 V
Vgs - Gate-Source Voltage
30 V
Qg - Gate Charge
260 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
700 W
Show more parameters (13)
Configuration
Single
Channel Mode
Enhancement
Height
26.59 mm
Length
20.29 mm
Transistor Type
1 N-Channel
Type
Linear Power MOSFET
Width
5.31 mm
Forward Transconductance - Min
7 S
Fall Time
42 ns
Rise Time
50 ns
Typical Turn-Off Delay Time
80 ns
Typical Turn-On Delay Time
40 ns
Unit Weight
0.352740 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

IXTK46N50L Specifications and Datasheet | ChipSourceHub