Toshiba
TK024N60Z1,S1F
MOSFETs N-ch MOSFET, 600 V, 0.024 Ohm10V, TO-247, DTMOS6
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- MOSFETs
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
19 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 600 V
- Id - Continuous Drain Current
- 80 A
- Rds On - Drain-Source Resistance
- 24 mOhms
- Vgs - Gate-Source Voltage
- 30 V
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Qg - Gate Charge
- 140 nC
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 506 W
- Channel Mode
- Enhancement
Show more parameters (7)
- Configuration
- Single
- Country of Origin
- CN
- Fall Time
- 7 ns
- Rise Time
- 100 ns
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 230 ns
- Typical Turn-On Delay Time
- 165 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.