Texas Instruments
CSD16340Q3T
MOSFET 25V, -55 to 150
Basic Information
View Datasheet ↗- Manufacturer
- Texas Instruments
- Product Category
- MOSFET
- Series
- CSD16340Q3
- Package
- VSON-CLIP-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Not compliant (source record)
Technical Specifications
25 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 25 V
- Id - Continuous Drain Current
- 60 A
- Rds On - Drain-Source Resistance
- 5.5 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 600 mV
- Vgs - Gate-Source Voltage
- 10 V, 8 V
- Qg - Gate Charge
- 9.2 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 3 W
Show more parameters (13)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- NexFET
- Height
- 1 mm
- Length
- 3.3 mm
- Transistor Type
- 1 N-Channel
- Width
- 3.3 mm
- Forward Transconductance - Min
- 121 S
- Fall Time
- 5.2 ns
- Rise Time
- 16.1 ns
- Typical Turn-Off Delay Time
- 13.8 ns
- Typical Turn-On Delay Time
- 4.8 ns
- Unit Weight
- 0.001541 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.