Infineon Technologies
BSO203P H
MOSFET P-Ch -20V -8.2A DSO-8 OptiMOS P
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Series
- OptiMOS P
- Package
- SO-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
26 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Id - Continuous Drain Current
- 8.2 A
- Rds On - Drain-Source Resistance
- 21 mOhms
- Vgs - Gate-Source Voltage
- 12 V
- Qg - Gate Charge
- - 26 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 2 W
- Configuration
- Dual
Show more parameters (14)
- Channel Mode
- Enhancement
- Tradename
- OptiMOS
- Height
- 1.75 mm
- Length
- 4.9 mm
- Transistor Type
- 2 P-Channel
- Width
- 3.9 mm
- Forward Transconductance - Min
- 33 S
- Fall Time
- 74 ns
- Moisture Sensitive
- Yes
- Rise Time
- 55 ns
- Typical Turn-Off Delay Time
- 45 ns
- Typical Turn-On Delay Time
- 16 ns
- Part # Aliases
- BSO203PHXUMA1 BSO23PHXT SP000613858
- Unit Weight
- 0.019048 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.