ROHM Semiconductor
RV2C002UNT2L
MOSFET 1.2V Drive Nch MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- MOSFET
- Series
- RVxC
- Package
- DFN-1006-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
21 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Id - Continuous Drain Current
- 180 mA
- Rds On - Drain-Source Resistance
- 2 Ohms
- Vgs th - Gate-Source Threshold Voltage
- 300 mV
- Vgs - Gate-Source Voltage
- 4.5 V
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 100 mW
- Configuration
- Single
Show more parameters (9)
- Channel Mode
- Enhancement
- Product
- MOSFETs
- Transistor Type
- 1 N-Channel MOSFET
- Type
- Small Signal MOSFET
- Fall Time
- 25 ns
- Rise Time
- 4 ns
- Typical Turn-Off Delay Time
- 12 ns
- Typical Turn-On Delay Time
- 3 ns
- Part # Aliases
- RV2C002UN
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.