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Vishay Semiconductors

SIB406EDK-T1-GE3

MOSFETs 20V Vds 12V Vgs PowerPAK SC-75

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay Semiconductors
Product Category
MOSFETs
Series
SIB
Package
SC-75-6
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

18 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
20 V
Id - Continuous Drain Current
6 A
Rds On - Drain-Source Resistance
46 mOhms
Vgs - Gate-Source Voltage
- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage
600 mV
Qg - Gate Charge
12 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
10 W
Show more parameters (6)
Channel Mode
Enhancement
Tradename
TrenchFET, PowerPAK
Configuration
Single
Country of Origin
CN
Part # Aliases
SIB406EDK-GE3
Unit Weight
0.003386 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SIB406EDK-T1-GE3 Specifications and Datasheet | ChipSourceHub