ON Semiconductor / Fairchild
KSD1616AGBU
Bipolar Transistors - BJT NPN Epitaxial Sil
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Brand
- ON Semiconductor / Fairchild
- Product Category
- Bipolar Transistors - BJT
- Series
- KSD1616A
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 120 V
- Emitter- Base Voltage VEBO
- 6 V
- Maximum DC Collector Current
- 1 A
- Gain Bandwidth Product fT
- 160 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 600
- Height
- 4.7 mm
- Length
- 4.7 mm
Show more parameters (6)
- Width
- 3.93 mm
- Continuous Collector Current
- 1 A
- DC Collector/Base Gain hfe Min
- 135
- Pd - Power Dissipation
- 750 mW
- Part # Aliases
- KSD1616AGBU_NL
- Unit Weight
- 0.006314 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.