STMicroelectronics
SCT011HU75G3AG
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- SiC MOSFETs
- Package
- HU3PAK-7
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
21 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 750 V
- Id - Continuous Drain Current
- 110 A
- Rds On - Drain-Source Resistance
- 15 mOhms
- Vgs - Gate-Source Voltage
- - 10 V, + 22 V
- Vgs th - Gate-Source Threshold Voltage
- 3.2 V
- Qg - Gate Charge
- 154 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 652 W
- Channel Mode
- Enhancement
Show more parameters (9)
- Qualification
- AEC-Q101
- Configuration
- Single
- Country of Origin
- JP
- Fall Time
- 9 ns
- Product
- SiC MOSFETS
- Rise Time
- 11 ns
- Technology
- SiC
- Typical Turn-Off Delay Time
- 42 ns
- Typical Turn-On Delay Time
- 23 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.