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Infineon / IR

IRFP4229PBF

MOSFET MOSFT 250V 44A 46mOhm 72nC Qg

Basic Information

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Manufacturer
Infineon
Brand
Infineon / IR
Product Category
MOSFET
Package
TO-247-3
Mounting Style
Through Hole
Packaging
Tube
RoHS
Compliant (source record)

Technical Specifications

24 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
250 V
Id - Continuous Drain Current
44 A
Rds On - Drain-Source Resistance
46 mOhms
Vgs - Gate-Source Voltage
30 V
Qg - Gate Charge
72 nC
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
310 W
Configuration
Single
Show more parameters (12)
Channel Mode
Enhancement
Height
20.7 mm
Length
15.87 mm
Transistor Type
1 N-Channel
Width
5.31 mm
Forward Transconductance - Min
83 S
Fall Time
19 ns
Rise Time
27 ns
Typical Turn-Off Delay Time
44 ns
Typical Turn-On Delay Time
25 ns
Part # Aliases
SP001578046
Unit Weight
1.340411 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

IRFP4229PBF Specifications and Datasheet | ChipSourceHub