Vishay / Siliconix
SIHU5N80AE-GE3
MOSFETs N-CHANNEL 100 V
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay / Siliconix
- Product Category
- MOSFETs
- Series
- SIHU E
- Mounting Style
- Through Hole
- Packaging
- Cut Tape
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 800 V
- Id - Continuous Drain Current
- 4.4 A
- Rds On - Drain-Source Resistance
- 1.35 Ohms
- Vgs - Gate-Source Voltage
- - 30 V, 30 V
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Qg - Gate Charge
- 11 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 62.5 W
Show more parameters (2)
- Channel Mode
- Enhancement
- Country of Origin
- CN
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.