Toshiba
TK2Q60D(Q)
MOSFET N-Ch MOS 2A 600V 60W 280pF 4.3 Ohm
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- MOSFET
- Series
- TK2Q60D
- Package
- PW-Mold2-3
- Mounting Style
- Through Hole
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
24 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 600 V
- Id - Continuous Drain Current
- 2 A
- Rds On - Drain-Source Resistance
- 4.3 Ohms
- Vgs th - Gate-Source Threshold Voltage
- 2.4 V
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 7 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 60 W
Show more parameters (12)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- MOSVII
- Height
- 7 mm
- Length
- 6.5 mm
- Transistor Type
- 1 N-Channel
- Width
- 2.3 mm
- Fall Time
- 7 ns
- Rise Time
- 15 ns
- Typical Turn-Off Delay Time
- 55 ns
- Typical Turn-On Delay Time
- 35 ns
- Unit Weight
- 0.139332 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.