IXYS
IXFK200N10P
MOSFET 200 Amps 100V 0.0075 Rds
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- MOSFET
- Series
- IXFK200N10
- Package
- TO-264-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
26 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 200 A
- Rds On - Drain-Source Resistance
- 7.5 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 5 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 235 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 830 W
Show more parameters (14)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- HiPerFET
- Height
- 26.59 mm
- Length
- 20.29 mm
- Transistor Type
- 1 N-Channel
- Type
- Polar HiPerFET Power MOSFET
- Width
- 5.31 mm
- Forward Transconductance - Min
- 60 S
- Fall Time
- 90 ns
- Rise Time
- 35 ns
- Typical Turn-Off Delay Time
- 150 ns
- Typical Turn-On Delay Time
- 30 ns
- Unit Weight
- 0.352740 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.