ROHM Semiconductor
HT8KF6HTB1
MOSFETs HSMT8 150V DUAL 7.A
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- MOSFETs
- Package
- HSMT-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
21 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 2 Channel
- Vds - Drain-Source Breakdown Voltage
- 150 V
- Id - Continuous Drain Current
- 7 A
- Rds On - Drain-Source Resistance
- 214 mOhms
- Vgs - Gate-Source Voltage
- 20 V
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Qg - Gate Charge
- 6.4 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 14 W
Show more parameters (9)
- Channel Mode
- Enhancement
- Configuration
- Dual
- Country of Origin
- CN
- Fall Time
- 6.6 ns
- Forward Transconductance - Min
- 2.5 S
- Rise Time
- 9.1 ns
- Transistor Type
- 2 N-Channel
- Typical Turn-Off Delay Time
- 19 ns
- Typical Turn-On Delay Time
- 11 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.