Infineon Technologies
IPD85P04P4-07
MOSFET P-Ch -40V -85A DPAK-2 OptiMOS-P2
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Series
- OptiMOS-P2
- Package
- TO-252-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
26 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 40 V
- Id - Continuous Drain Current
- 85 A
- Rds On - Drain-Source Resistance
- 5.3 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 89 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 88 W
Show more parameters (14)
- Configuration
- Single
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Tradename
- OptiMOS
- Height
- 2.3 mm
- Length
- 6.5 mm
- Transistor Type
- 1 P-Channel
- Width
- 6.22 mm
- Fall Time
- 39 ns
- Rise Time
- 15 ns
- Typical Turn-Off Delay Time
- 34 ns
- Typical Turn-On Delay Time
- 24 ns
- Part # Aliases
- IPD85P04P407ATMA1 IPD85P4P47XT SP000842066
- Unit Weight
- 0.023634 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.