Infineon Technologies
IRF6617TRPBF
MOSFET 30V 1 N-CH HEXFET 8.1mOhms 11nC
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Package
- DirectFET-ST
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 14 A
- Rds On - Drain-Source Resistance
- 10.3 mOhms
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 11 nC
- Pd - Power Dissipation
- 42 W
- Configuration
- Single
- Height
- 0.7 mm
- Length
- 4.85 mm
Show more parameters (3)
- Transistor Type
- 1 N-Channel
- Width
- 3.95 mm
- Part # Aliases
- SP001531694
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.