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Vishay / Siliconix

SQJQ404E-T1_GE3

MOSFET 40V Vds 20V Vgs PowerPAK 8 x 8L

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay / Siliconix
Product Category
MOSFET
Package
PowerPAK-8x8L-4
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

20 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
40 V
Id - Continuous Drain Current
200 A
Rds On - Drain-Source Resistance
1.72 mOhms
Vgs th - Gate-Source Threshold Voltage
2.5 V
Vgs - Gate-Source Voltage
10 V
Qg - Gate Charge
175 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
150 W
Show more parameters (8)
Configuration
Single
Channel Mode
Enhancement
Transistor Type
1 N-Channel
Forward Transconductance - Min
160 S
Fall Time
8 ns
Rise Time
23 ns
Typical Turn-Off Delay Time
58 ns
Typical Turn-On Delay Time
22 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SQJQ404E-T1_GE3 Specifications and Datasheet | ChipSourceHub