Infineon Technologies
IRF8308MTRPBF
MOSFET 30V N-Channel HEXFET Power MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Package
- DirectFET-MX
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 150 A
- Rds On - Drain-Source Resistance
- 3.5 mOhms
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 28 nC
- Pd - Power Dissipation
- 89 W
- Configuration
- Single
- Tradename
- DirectFET
- Height
- 0.7 mm
Show more parameters (6)
- Length
- 6.35 mm
- Transistor Type
- 1 N-Channel
- Width
- 5.05 mm
- Moisture Sensitive
- Yes
- Part # Aliases
- SP001570686
- Unit Weight
- 0.017637 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.