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Toshiba

TK4P60DB(T6RSS-Q)

MOSFET N-Ch MOS 3.7A 600V 80W 540pF 2.0 Ohm

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
MOSFET
Series
TK4P60DB
Package
TO-252-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

14 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
600 V
Id - Continuous Drain Current
3.7 A
Rds On - Drain-Source Resistance
2 Ohms
Pd - Power Dissipation
80 W
Configuration
Single
Tradename
MOSVII
Height
2.3 mm
Length
6.5 mm
Transistor Type
1 N-Channel
Show more parameters (2)
Width
5.5 mm
Unit Weight
0.139332 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

TK4P60DB(T6RSS-Q) Specifications and Datasheet | ChipSourceHub