Diodes Incorporated
ZXMHN6A07T8TA
MOSFETs 60V 1.6A N-Channel MOSFET H-Bridge
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- MOSFETs
- Series
- ZXMHN6
- Package
- SM-8
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
21 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 4 Channel
- Vds - Drain-Source Breakdown Voltage
- 60 V
- Id - Continuous Drain Current
- 1.6 A
- Rds On - Drain-Source Resistance
- 300 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V
- Qg - Gate Charge
- 3.2 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1.6 W
Show more parameters (9)
- Channel Mode
- Enhancement
- Configuration
- Quad
- Country of Origin
- DE
- Fall Time
- 2 ns
- Forward Transconductance - Min
- 2.3 S
- Rise Time
- 1.4 ns
- Transistor Type
- 4 N-Channel
- Typical Turn-Off Delay Time
- 4.9 ns
- Typical Turn-On Delay Time
- 1.8 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.