Vishay
SIJK5100E-T1-GE3
MOSFETs PWRPK 100V 417A
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Product Category
- MOSFETs
- Series
- SIJK5100E
- Package
- PowerPAK-16
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
22 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 417 A
- Rds On - Drain-Source Resistance
- 1.4 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Qg - Gate Charge
- 131 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 536 W
Show more parameters (10)
- Channel Mode
- Enhancement
- Tradename
- TrenchFET
- Configuration
- Single
- Country of Origin
- DE
- Fall Time
- 35 ns
- Forward Transconductance - Min
- 245 S
- Rise Time
- 18 ns
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 54 ns
- Typical Turn-On Delay Time
- 41 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.