Infineon Technologies
IMZA65R007M2HXKSA1
SiC MOSFETs SILICON CARBIDE MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- SiC MOSFETs
- Series
- 650V G2
- Package
- TO-247-4
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
26 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Id - Continuous Drain Current
- 210 A
- Rds On - Drain-Source Resistance
- 8.5 mOhms
- Vgs - Gate-Source Voltage
- - 18 V, + 18 V
- Vgs th - Gate-Source Threshold Voltage
- 5.6 V
- Qg - Gate Charge
- 439 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 625 W
- Channel Mode
- Enhancement
Show more parameters (14)
- Tradename
- CoolSiC
- Configuration
- Single
- Country of Assembly
- CN
- Country of Diffusion
- AT
- Country of Origin
- AT
- Fall Time
- 20 ns
- Product
- MOSFETs
- Rise Time
- 41 ns
- Technology
- SiC
- Transistor Type
- 1 N-Channel
- Type
- CoolSiC MOSFET
- Typical Turn-Off Delay Time
- 53 ns
- Typical Turn-On Delay Time
- 22 ns
- Part # Aliases
- IMZA65R007M2H
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.