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Toshiba

TK72A08N1,S4X

MOSFET MOSFET NCh 3.7ohm VGS10V10uAVDS80V

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
MOSFET
Series
TK72A08N1
Package
TO-220FP-3
Mounting Style
Through Hole
RoHS
Compliant (source record)

Technical Specifications

20 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
80 V
Id - Continuous Drain Current
72 A
Rds On - Drain-Source Resistance
3.7 mOhms
Vgs th - Gate-Source Threshold Voltage
4 V
Vgs - Gate-Source Voltage
20 V
Qg - Gate Charge
81 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
45 W
Show more parameters (8)
Configuration
Single
Channel Mode
Enhancement
Tradename
U-MOSVIII-H
Height
15 mm
Length
10 mm
Transistor Type
1 N-Channel
Width
4.5 mm
Unit Weight
0.211644 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

TK72A08N1,S4X Specifications and Datasheet | ChipSourceHub