Diodes Incorporated
DMP6110SSD-13
MOSFET 60V Dual P-Ch Enh FET 60Vds 20Vgs
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- MOSFET
- Series
- DMP6110
- Package
- SO-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
20 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 60 V
- Id - Continuous Drain Current
- 3.3 A
- Rds On - Drain-Source Resistance
- 105 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1 V
- Vgs - Gate-Source Voltage
- 10 V
- Qg - Gate Charge
- 17.2 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1.7 W
Show more parameters (8)
- Configuration
- Dual
- Channel Mode
- Enhancement
- Transistor Type
- 2 P-Channel
- Fall Time
- 42 ns
- Rise Time
- 23 ns
- Typical Turn-Off Delay Time
- 34 ns
- Typical Turn-On Delay Time
- 4.4 ns
- Unit Weight
- 0.002610 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.