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Vishay Semiconductors

SI4124DY-T1-GE3

MOSFETs 40V Vds 20V Vgs SO-8

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay Semiconductors
Product Category
MOSFETs
Series
SI4
Package
SOIC-8
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

18 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
40 V
Id - Continuous Drain Current
20.5 A
Rds On - Drain-Source Resistance
7.5 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
1 V
Qg - Gate Charge
77 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
5.7 W
Show more parameters (6)
Channel Mode
Enhancement
Tradename
TrenchFET
Configuration
Single
Country of Origin
CN
Part # Aliases
SI4124DY-GE3
Unit Weight
0.006596 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SI4124DY-T1-GE3 Specifications and Datasheet | ChipSourceHub