Diodes Incorporated
DMTH69M8LFVWQ-13
MOSFETs MOSFET BVDSS: 41V 60V PowerDI3333-8/SWP T&R 3K
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- MOSFETs
- Package
- PowerDI3333-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
22 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 60 V
- Id - Continuous Drain Current
- 45.4 A
- Rds On - Drain-Source Resistance
- 9.5 mOhms
- Vgs - Gate-Source Voltage
- - 12 V, 12 V
- Vgs th - Gate-Source Threshold Voltage
- 3 V
- Qg - Gate Charge
- 33.5 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 3.6 W
Show more parameters (10)
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Configuration
- Dual
- Country of Origin
- CN
- Fall Time
- 15.7 ns
- Rise Time
- 8.6 ns
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 35.9 ns
- Typical Turn-On Delay Time
- 4.5 ns
- Unit Weight
- 0.001058 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.