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onsemi

MMBT3906TT1G

Bipolar Transistors - BJT 200mA 40V PNP

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
Bipolar Transistors - BJT
Series
MMBT3906T
Package
SC-75-3
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

16 parameters
Technology
Si
Transistor Polarity
PNP
Configuration
Single
Maximum DC Collector Current
200 mA
Collector- Emitter Voltage VCEO Max
40 V
Collector- Base Voltage VCBO
40 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
400 mV
Pd - Power Dissipation
225 mW
Gain Bandwidth Product fT
250 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Show more parameters (4)
Continuous Collector Current
- 200 mA
Country of Origin
CN
DC Collector/Base Gain hfe Min
60
Unit Weight
0.000089 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MMBT3906TT1G Specifications and Datasheet | ChipSourceHub