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Vishay Semiconductors

SQJQ150E-T1_GE3

MOSFETs N-CHANNEL 40-V (D-S) 175C AEC-Q101

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay Semiconductors
Product Category
MOSFETs
Series
SQJQ
Package
PowerPak-8
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

21 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
40 V
Id - Continuous Drain Current
233 A
Rds On - Drain-Source Resistance
1.9 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
3.5 V
Qg - Gate Charge
61 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
187 W
Show more parameters (9)
Channel Mode
Enhancement
Qualification
AEC-Q101
Configuration
Single
Country of Origin
CN
Fall Time
10 ns
Rise Time
19 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
30 ns
Typical Turn-On Delay Time
17 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SQJQ150E-T1_GE3 Specifications and Datasheet | ChipSourceHub