STMicroelectronics
SCT040H65G3AG
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- SiC MOSFETs
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
16 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Id - Continuous Drain Current
- 30 A
- Rds On - Drain-Source Resistance
- 40 mOhms
- Vgs - Gate-Source Voltage
- - 10 V, + 22 V
- Vgs th - Gate-Source Threshold Voltage
- 4.2 V
- Qg - Gate Charge
- 39.5 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 221 W
- Channel Mode
- Enhancement
Show more parameters (4)
- Qualification
- AEC-Q101
- Country of Origin
- CN
- Product
- MOSFETs
- Technology
- SiC
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.