IXYS
IXFT94N30P3
MOSFET N-Channel: Power MOSFET w/Fast Diode
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- MOSFET
- Series
- IXFT94N30
- Package
- TO-268-3
- Mounting Style
- SMD/SMT
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
22 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 300 V
- Id - Continuous Drain Current
- 94 A
- Rds On - Drain-Source Resistance
- 36 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 3 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 102 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1040 W
Show more parameters (10)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- HiPerFET
- Transistor Type
- 1 N-Channel
- Forward Transconductance - Min
- 40 S
- Fall Time
- 11 ns
- Rise Time
- 19 ns
- Typical Turn-Off Delay Time
- 49 ns
- Typical Turn-On Delay Time
- 23 ns
- Unit Weight
- 0.229281 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.