Vishay Semiconductors
SI3493BDV-T1-GE3
MOSFETs 20V 8.0A 2.97W 27.5mohm @ 4.5V
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay Semiconductors
- Product Category
- MOSFETs
- Series
- SI3
- Package
- TSOP-6
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
23 parameters- Technology
- Si
- Transistor Polarity
- P-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Id - Continuous Drain Current
- 8 A
- Rds On - Drain-Source Resistance
- 27.5 mOhms
- Vgs - Gate-Source Voltage
- - 8 V, 8 V
- Vgs th - Gate-Source Threshold Voltage
- 900 mV
- Qg - Gate Charge
- 43.5 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 2.97 W
Show more parameters (11)
- Channel Mode
- Enhancement
- Tradename
- TrenchFET
- Configuration
- Single
- Country of Origin
- CN
- Fall Time
- 84 ns
- Rise Time
- 72 ns
- Transistor Type
- 1 P-Channel
- Typical Turn-Off Delay Time
- 75 ns
- Typical Turn-On Delay Time
- 22 ns
- Part # Aliases
- SI3493BDV-T1-BE3 SI3493BDV-GE3
- Unit Weight
- 0.000705 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.