ON Semiconductor / Fairchild
FDP023N08B-F102
MOSFET FET 75V 2.35 MOHM TO220
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Brand
- ON Semiconductor / Fairchild
- Product Category
- MOSFET
- Series
- FDP023N08B
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
25 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 75 V
- Id - Continuous Drain Current
- 242 A
- Rds On - Drain-Source Resistance
- 1.96 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 3.8 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 150 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 245 W
Show more parameters (13)
- Configuration
- Single
- Channel Mode
- Enhancement
- Height
- 16.3 mm
- Length
- 10.67 mm
- Transistor Type
- 1 N-Channel
- Width
- 4.7 mm
- Forward Transconductance - Min
- 185 S
- Fall Time
- 56 ns
- Rise Time
- 71 ns
- Typical Turn-Off Delay Time
- 111 ns
- Typical Turn-On Delay Time
- 41 ns
- Part # Aliases
- FDP023N08B_F102
- Unit Weight
- 0.082753 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.