Texas Instruments
CSD16322Q5
MOSFET N-Channel NexFET Pwr MOSFETs
Basic Information
View Datasheet ↗- Manufacturer
- Texas Instruments
- Product Category
- MOSFET
- Series
- CSD16322Q5
- Package
- VSON-CLIP-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- E
Technical Specifications
24 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 25 V
- Id - Continuous Drain Current
- 100 A
- Rds On - Drain-Source Resistance
- 5.8 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1.1 V
- Vgs - Gate-Source Voltage
- 10 V
- Qg - Gate Charge
- 6.8 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 3.1 W
Show more parameters (12)
- Configuration
- Single
- Tradename
- NexFET
- Height
- 1 mm
- Length
- 6 mm
- Transistor Type
- 1 N-Channel
- Width
- 5 mm
- Forward Transconductance - Min
- 106 S
- Fall Time
- 3.7 ns
- Rise Time
- 10.7 ns
- Typical Turn-Off Delay Time
- 12.3 ns
- Typical Turn-On Delay Time
- 6.1 ns
- Unit Weight
- 0.003891 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.