STMicroelectronics
STB200NF03T4
MOSFET N-Ch 30 Volt 120 Amp
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- MOSFET
- Series
- STB200NF03
- Package
- TO-263-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
24 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 120 A
- Rds On - Drain-Source Resistance
- 3.2 mOhms
- Vgs - Gate-Source Voltage
- 20 V
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 300 W
- Configuration
- Single
- Channel Mode
- Enhancement
Show more parameters (12)
- Qualification
- AEC-Q101
- Height
- 4.6 mm
- Length
- 10.4 mm
- Transistor Type
- 1 N-Channel
- Type
- MOSFET
- Width
- 9.35 mm
- Forward Transconductance - Min
- 200 S
- Fall Time
- 60 ns
- Rise Time
- 195 ns
- Typical Turn-Off Delay Time
- 75 ns
- Typical Turn-On Delay Time
- 30 ns
- Unit Weight
- 0.139332 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.