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Toshiba

TPHR6503PL1,LQ

MOSFETs UMOS9 SOP-ADV(N) RDSon=0.65mohm(max)

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
MOSFETs
Series
UMOS IX-H
Package
SOP-8
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

19 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
420 A
Rds On - Drain-Source Resistance
410 uOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
2.1 V
Qg - Gate Charge
110 nC
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
210 W
Channel Mode
Enhancement
Show more parameters (7)
Configuration
Single
Country of Origin
MY
Fall Time
10 ns
Rise Time
12 ns
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
36 ns
Part # Aliases
TPHR6503PL1,LQ(M

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

TPHR6503PL1,LQ Specifications and Datasheet | ChipSourceHub