Nexperia
PMXB360ENEAZ
MOSFET 80 V, N-channel Trench MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- MOSFET
- Package
- DFN-1010D-3
- Mounting Style
- SMD/SMT
- Packaging
- 20 V
- RoHS
- Compliant (source record)
Technical Specifications
19 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 80 V
- Id - Continuous Drain Current
- 1.1 A
- Rds On - Drain-Source Resistance
- 345 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1.7 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 3 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 400 mW
- Channel Mode
- Enhancement
Show more parameters (7)
- Qualification
- AEC-Q101
- Forward Transconductance - Min
- 3.2 S
- Fall Time
- 3 ns
- Rise Time
- 3.5 ns
- Typical Turn-Off Delay Time
- 9 ns
- Typical Turn-On Delay Time
- 2 ns
- Unit Weight
- 0.000042 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.