Infineon Technologies
BC 850B E6327
Bipolar Transistors - BJT NPN SilicnAF TRNSTRS
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- Bipolar Transistors - BJT
- Series
- BC850
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
19 parameters- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 45 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 200 mV
- Maximum DC Collector Current
- 200 mA
- Gain Bandwidth Product fT
- 250 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 450
- Height
- 1 mm
Show more parameters (7)
- Length
- 2.9 mm
- Width
- 1.3 mm
- Continuous Collector Current
- 100 mA
- DC Collector/Base Gain hfe Min
- 200
- Pd - Power Dissipation
- 330 mW
- Part # Aliases
- BC850BE6327HTSA1 BC85BE6327XT SP000010572
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.