Infineon Technologies
BSC100N10NSF G
MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Series
- OptiMOS 2
- Package
- TDSON-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
26 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 90 A
- Rds On - Drain-Source Resistance
- 10 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 44 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 156 W
Show more parameters (14)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- OptiMOS
- Height
- 1.27 mm
- Length
- 5.9 mm
- Transistor Type
- 1 N-Channel
- Type
- OptiMOS 2 Power-Transistor
- Width
- 5.15 mm
- Forward Transconductance - Min
- 61 S, 31 S
- Fall Time
- 7 ns
- Rise Time
- 23 ns
- Typical Turn-Off Delay Time
- 26 ns
- Typical Turn-On Delay Time
- 18 ns
- Part # Aliases
- BSC100N10NSFGATMA1 BSC1N1NSFGXT SP000379595
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.