Vishay Semiconductors
SQ4532CEY-T1_GE3
MOSFETs N- AND P-CHANNEL 30-V (D-S) MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay Semiconductors
- Product Category
- MOSFETs
- Series
- SQ4532CEY
- Package
- SO-8
- Mounting Style
- SMD/SMT
Technical Specifications
21 parameters- Technology
- Si
- Transistor Polarity
- N-Channel, P-Channel
- Number of Channels
- 2 Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 5.3 A, 7.3 A
- Rds On - Drain-Source Resistance
- 21 mOhms, 56 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
- Qg - Gate Charge
- 5.9 nC, 7.9 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 3.3 W
Show more parameters (9)
- Channel Mode
- Enhancement
- Configuration
- Dual
- Country of Origin
- HK
- Fall Time
- 2 ns, 4 ns
- Forward Transconductance - Min
- 22 S, 5.5 S
- Rise Time
- 3 ns, 4 ns
- Transistor Type
- 1 N-Channel, 1 P-Channel
- Typical Turn-Off Delay Time
- 15 ns, 19 ns
- Typical Turn-On Delay Time
- 6 ns, 7 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.