Nexperia
GANE350-650FBAZ
GaN FETs GANE350-650FBA/SOT8075/DFN5060
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- GaN FETs
- Package
- DFN-5
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
24 parameters- Transistor Polarity
- P-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Id - Continuous Drain Current
- 6 A
- Rds On - Drain-Source Resistance
- 350 mOhms
- Vgs - Gate-Source Voltage
- 7 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
- Qg - Gate Charge
- 1.5 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 65 W
- Channel Mode
- Enhancement
Show more parameters (12)
- Configuration
- Single
- Country of Origin
- CN
- Fall Time
- 6.1 ns
- Maximum Drain Gate Voltage
- 40 V
- Moisture Sensitive
- Yes
- Product
- GaN FETs
- Rise Time
- 3.5 ns
- Technology
- GaN
- Transistor Type
- 1 P-Channel
- Typical Turn-Off Delay Time
- 1.2 ns
- Typical Turn-On Delay Time
- 0.9 ns
- Part # Aliases
- 934667638332
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.