Infineon Technologies
IKQ40N120CH3XKSA1
IGBT Transistors IGBT PRODUCTS
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- IGBT Transistors
- Package
- TO247-3-46
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 1200 V
- Collector-Emitter Saturation Voltage
- 2 V
- Maximum Gate Emitter Voltage
- 20 V
- Continuous Collector Current at 25 C
- 80 A
- Pd - Power Dissipation
- 500 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 175 C
- Continuous Collector Current Ic Max
- 80 A
- Gate-Emitter Leakage Current
- 100 nA
- Part # Aliases
- IKQ40N120CH3 SP001272706
Show more parameters (1)
- Unit Weight
- 0.211644 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.