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Vishay / Siliconix

SQD50034EL_GE3

MOSFET Automotive N-Channel 60 V (D-S) 175C MOSFET

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay / Siliconix
Product Category
MOSFET
Package
TO-252-3
Mounting Style
SMD/SMT
RoHS
E

Technical Specifications

17 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
60 V
Id - Continuous Drain Current
100 A
Rds On - Drain-Source Resistance
3.3 mOhms
Vgs th - Gate-Source Threshold Voltage
2 V
Vgs - Gate-Source Voltage
20 V
Qg - Gate Charge
60 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Channel Mode
Enhancement
Show more parameters (5)
Tradename
TrenchFET
Fall Time
7 ns
Rise Time
7 ns
Typical Turn-Off Delay Time
33 ns
Typical Turn-On Delay Time
15 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SQD50034EL_GE3 Specifications and Datasheet | ChipSourceHub