Diodes Incorporated
ZVN2106GTA
MOSFET N-Chnl 60V T/R
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- MOSFET
- Series
- ZVN2106
- Package
- SOT-223-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
24 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 60 V
- Id - Continuous Drain Current
- 710 mA
- Rds On - Drain-Source Resistance
- 2 Ohms
- Vgs th - Gate-Source Threshold Voltage
- 800 mV
- Vgs - Gate-Source Voltage
- 10 V
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 2 W
- Configuration
- Single
Show more parameters (12)
- Channel Mode
- Enhancement
- Height
- 1.65 mm
- Length
- 6.7 mm
- Transistor Type
- 1 N-Channel
- Type
- FET
- Width
- 3.7 mm
- Forward Transconductance - Min
- 0.3 S
- Fall Time
- 15 ns
- Rise Time
- 8 ns
- Typical Turn-Off Delay Time
- 12 ns
- Typical Turn-On Delay Time
- 7 ns
- Unit Weight
- 0.003951 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.