Diodes Incorporated
DMN12M7UCA10-7
MOSFET MOSFET BVDSS: 8V~24V X4-DSN3015-10 T&R 5K
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- MOSFET
- Package
- X4-DSN3015-10
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
19 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 12 V
- Id - Continuous Drain Current
- 20.2 A
- Rds On - Drain-Source Resistance
- 2.75 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 0.5 V
- Vgs - Gate-Source Voltage
- 8 V
- Qg - Gate Charge
- 35.7 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1.73 W
Show more parameters (7)
- Configuration
- Dual
- Channel Mode
- Enhancement
- Transistor Type
- 2 N-Channel
- Fall Time
- 2830 ns
- Rise Time
- 1468 ns
- Typical Turn-Off Delay Time
- 2914 ns
- Typical Turn-On Delay Time
- 880 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.