Vishay Semiconductors
VS-4C08ET07T-M3
SiC Schottky Diodes SicG4TO-2202L
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay Semiconductors
- Product Category
- SiC Schottky Diodes
- Series
- VS-4C08ET07THM3
- Package
- TO-220AC-2
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
11 parameters- Configuration
- Single
- If - Forward Current
- 8 A
- Vrrm - Repetitive Reverse Voltage
- 650 V
- Vf - Forward Voltage
- 1.3 V
- Ifsm - Forward Surge Current
- 51 A
- Ir - Reverse Current
- 41 uA
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Country of Origin
- HK
- Pd - Power Dissipation
- 68 W
- Vr - Reverse Voltage
- 650 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.