ROHM Semiconductor
SCT4050KEHRC11
SiC MOSFETs 1200V, 32A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- SiC MOSFETs
- Package
- TO-247N-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
23 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 32 A
- Rds On - Drain-Source Resistance
- 65 mOhms
- Vgs - Gate-Source Voltage
- - 4 V, + 21 V
- Vgs th - Gate-Source Threshold Voltage
- 4.8 V
- Qg - Gate Charge
- 71 nC
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 136 W
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
Show more parameters (11)
- Configuration
- Single
- Country of Origin
- TH
- Fall Time
- 14 ns
- Forward Transconductance - Min
- 7.4 S
- Product
- Power MOSFETs
- Rise Time
- 19 ns
- Technology
- SiC
- Transistor Type
- 1 N-Channel
- Type
- SiC Power MOSFET
- Typical Turn-Off Delay Time
- 31 ns
- Typical Turn-On Delay Time
- 11 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.