IXYS
IXGX120N60A3
IGBT Transistors 120 Amps 600V
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- IGBT Transistors
- Series
- IXGX120N60
- Package
- PLUS 247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 1.2 V
- Maximum Gate Emitter Voltage
- 20 V
- Continuous Collector Current at 25 C
- 200 A
- Pd - Power Dissipation
- 780 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current Ic Max
- 600 A
- Height
- 21.34 mm
- Length
- 16.13 mm
Show more parameters (6)
- Operating Temperature Range
- - 55 C to + 150 C
- Width
- 5.21 mm
- Continuous Collector Current
- 200 A
- Gate-Emitter Leakage Current
- 400 nA
- Tradename
- GenX3
- Unit Weight
- 0.229281 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.