Taiwan Semiconductor
TQM250NB06DCR RLG
MOSFETs 60V, 30A, Dual N-Channel Power MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Taiwan Semiconductor
- Product Category
- MOSFETs
- Package
- PDFN56U-6
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
23 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 2 Channel
- Vds - Drain-Source Breakdown Voltage
- 60 V
- Id - Continuous Drain Current
- 6 A
- Rds On - Drain-Source Resistance
- 25 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 3.8 V
- Qg - Gate Charge
- 24 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 2.5 W
Show more parameters (11)
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Country of Origin
- TW
- Fall Time
- 19 ns
- Forward Transconductance - Min
- 27 S
- Rise Time
- 20 ns
- Transistor Type
- 2 N-Channel
- Typical Turn-Off Delay Time
- 14 ns
- Typical Turn-On Delay Time
- 4 ns
- Part # Aliases
- TQM250NB06DCR
- Unit Weight
- 0.013143 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.