Infineon Technologies
IPA60R190E6
MOSFET N-Ch 650V 20.2A TO220FP-3 CoolMOS E6
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Series
- CoolMOS E6
- Package
- TO-220FP-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
22 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 600 V
- Id - Continuous Drain Current
- 20.2 A
- Rds On - Drain-Source Resistance
- 190 mOhms
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 63 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 151 W
- Configuration
- Single
Show more parameters (10)
- Tradename
- CoolMOS
- Height
- 16.15 mm
- Length
- 10.65 mm
- Transistor Type
- 1 N-Channel
- Width
- 4.85 mm
- Fall Time
- 8 nS
- Rise Time
- 10 ns
- Typical Turn-Off Delay Time
- 90 nS
- Part # Aliases
- IPA60R190E6XKSA1 IPA6R19E6XK SP000797380
- Unit Weight
- 0.211644 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.