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Vishay Semiconductors

SQS405CENW-T1_GE3

MOSFETs P-CHANNEL 12-V (D-S) 175C AEC-Q101

Basic Information

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Manufacturer
Vishay
Brand
Vishay Semiconductors
Product Category
MOSFETs
Series
SQS
Package
PowerPak-8
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

21 parameters
Technology
Si
Transistor Polarity
P-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
12 V
Id - Continuous Drain Current
16 A
Rds On - Drain-Source Resistance
15 mOhms
Vgs - Gate-Source Voltage
- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage
1 V
Qg - Gate Charge
53.6 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
39 W
Show more parameters (9)
Channel Mode
Enhancement
Qualification
AEC-Q101
Configuration
Single
Country of Origin
CN
Fall Time
26 ns
Rise Time
6 ns
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
58 ns
Typical Turn-On Delay Time
11 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SQS405CENW-T1_GE3 Specifications and Datasheet | ChipSourceHub