Wolfspeed
C3M0016120K1
SiC MOSFETs SiC, MOSFET, 16mO, 1200V, TO-247-4 LP, Industrial
Basic Information
View Datasheet ↗- Manufacturer
- Wolfspeed
- Product Category
- SiC MOSFETs
- Package
- TO-247-4
- Mounting Style
- Through Hole
Technical Specifications
23 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 115 A
- Rds On - Drain-Source Resistance
- 29 mOhms
- Vgs - Gate-Source Voltage
- - 8 V, + 19 V
- Vgs th - Gate-Source Threshold Voltage
- 3.8 V
- Qg - Gate Charge
- 223 nC
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 556 W
- Channel Mode
- Enhancement
Show more parameters (11)
- Configuration
- Single
- Country of Origin
- CN
- Fall Time
- 13 ns
- Forward Transconductance - Min
- 49 S
- Product
- MOSFETs
- Rise Time
- 40 ns
- Technology
- SiC
- Transistor Type
- 1 N-Channel
- Type
- Silicon Carbide Power MOSFET
- Typical Turn-Off Delay Time
- 62 ns
- Typical Turn-On Delay Time
- 19 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.